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Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3000C15-8GTZ 8GB

Corsair CMSO4GX3M1C1600C11 4GB vs G Skill Intl F4-3000C15-8GTZ 8GB

总分
star star star star star
Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分
star star star star star
G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB

差异 规格 评论

差异

Corsair CMSO4GX3M1C1600C11 4GB 需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
G Skill Intl F4-3000C15-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GTZ 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.5 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.6 left arrow 18.5
  • 写入速度，GB/s
    8.3 left arrow 14.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 3313

Corsair CMSO4GX3M1C1600C11 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB

G Skill Intl F4-3000C15-8GTZ 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
G Skill Intl F4-3000C15-8GTZ 8GB
G Skill Intl F4-3000C15-8GTZ 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
G Skill Intl F4-2400C17-4GFT 4GB
G Skill Intl F4-2400C17-4GFT 4GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Kingston ACR32D4U2S1ME-8 8GB
Kingston ACR32D4U2S1ME-8 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMT32GX4M4K3600C16 8GB
Corsair CMT32GX4M4K3600C16 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston 9965604-033.D00G 16GB
Kingston 9965604-033.D00G 16GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
Crucial Technology BLS16G4D240FSC.16FBD 16GB
内存RAM