Corsair CMSO4GX3M1C1600C11 4GB vs Micron Technology 9ASF1G72PZ-2G9E1 8GB

总分

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

总分

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

差异规格评论

差异

Corsair CMSO4GX3M1C1600C11 4GB

需要考虑的原因
Corsair CMSO4GX3M1C1600C11 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 48% 更低的延时
更快的读取速度，GB/s

12.6 10.4

测试中的平均数值
更快的写入速度，GB/s

8.3 8.2

测试中的平均数值

Micron Technology 9ASF1G72PZ-2G9E1 8GB

需要考虑的原因
Micron Technology 9ASF1G72PZ-2G9E1 8GB

报告一个错误

更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Corsair CMSO4GX3M1C1600C11 4GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 54
读取速度，GB/s

12.6 10.4
写入速度，GB/s

8.3 8.2
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 26
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2112 2259

RAM Latency Calculator

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RAM 2

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