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Corsair CMSX4GX3M1A1600C9 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Corsair CMSX4GX3M1A1600C9 4GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分
star star star star star
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异 规格 评论

差异

Corsair CMSX4GX3M1A1600C9 4GB 需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB
报告一个错误
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 38
    左右 -65% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Corsair CMSX4GX3M1A1600C9 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 23
  • 读取速度，GB/s
    12.8 left arrow 18.1
  • 写入速度，GB/s
    9.1 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2099 left arrow 3317

Corsair CMSX4GX3M1A1600C9 4GB RAM的比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK16GX4M2C3333C16 8GB
Corsair CMK16GX4M2C3333C16 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Corsair CMK32GX4M4Z3200C16 8GB
Corsair CMK32GX4M4Z3200C16 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Kingston 9905678-024.A00G 4GB
Kingston 9905678-024.A00G 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CMK16GX4M2D3600C16 8GB
Corsair CMK16GX4M2D3600C16 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
内存RAM