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Corsair CMT16GX3M4X2133C9 4GB
Corsair CMT16GX3M4X2133C9 4GB
比较
Corsair CMT16GX3M4X2133C9 4GB vs Corsair CMT16GX3M4X2133C9 4GB
总分
Corsair CMT16GX3M4X2133C9 4GB
总分
Corsair CMT16GX3M4X2133C9 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMT16GX3M4X2133C9 4GB
报告一个错误
需要考虑的原因
Corsair CMT16GX3M4X2133C9 4GB
报告一个错误
规格
完整的技术规格清单
Corsair CMT16GX3M4X2133C9 4GB
Corsair CMT16GX3M4X2133C9 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
34
34
读取速度,GB/s
15.0
15.0
写入速度,GB/s
11.5
11.5
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC3-10600, 1.5V, CAS Supported: 6 7 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
2966
2966
Corsair CMT16GX3M4X2133C9 4GB RAM的比较
Corsair CMX32GX3M4A1600C11 8GB
Corsair CMT16GX3M4X2133C9 4GB RAM的比较
Corsair CMX32GX3M4A1600C11 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T3354BZ0-CCC 256MB
Hypertec G2RT-4AFT00 16GB
Corsair CMY16GX3M4A2133C8 4GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905599-025.A00G 8GB
Kingston 9905584-015.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3333C16-8GTZ 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3200C16D4/8GX 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SpecTek Incorporated 16G2666CL19 16GB
Samsung M391B5673EH1-CH9 2GB
Hyundai Inc GR26C16S8K2HU416 8GB
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5474-028.A00LF 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMW16GX4M2D3600C16 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Corsair CMY16GX3M4A2133C8 4GB
SK Hynix HMA82GU7AFR8N-UH 16GB
报告一个错误
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Bug description
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