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Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
比较
Corsair CMV4GX3M1B1600C11 4GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB
总分
Corsair CMV4GX3M1B1600C11 4GB
总分
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMV4GX3M1B1600C11 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
41
左右 39% 更低的延时
更快的读取速度,GB/s
14.2
7.7
测试中的平均数值
更快的写入速度,GB/s
8.1
7.6
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
41
读取速度,GB/s
14.2
7.7
写入速度,GB/s
8.1
7.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 9 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2307
1855
Corsair CMV4GX3M1B1600C11 4GB RAM的比较
Corsair CMV4GX3M1A1600C11 4GB
Crucial Technology BLS8G4D240FSC.16FBR2 8GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3200C16-8GRS 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston X75V1H-MIE 32GB
Corsair CMV4GX3M1B1600C11 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M393B2G70BH0-CK0 16GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT4G4DFS8213.C8FBR2 4GB
Kingston KHX2133C11D3/4GX 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Kingston 9965525-144.A00LF 8GB
Avant Technology W642GU42J2320NH 16GB
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Crucial Technology CT25664AA800.M16FM 2GB
Kingston KHX2666C15S4/8G 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905630-007.A00G 8GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 9905625-004.A03LF 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C16-8GTZSW 8GB
报告一个错误
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Bug description
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