Corsair CMY16GX3M4A2133C8 4GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 32

左右 38% 更低的延时
更快的读取速度，GB/s

17 11.8

测试中的平均数值
更快的写入速度，GB/s

11.5 8.7

测试中的平均数值

Micron Technology 18ADF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 32
读取速度，GB/s

17.0 11.8
写入速度，GB/s

11.5 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3077 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CF8 4GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 9905471-006.A01LF 4GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Asgard VMA44UG-MEC1U2AW1 8GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Golden Empire CL15-15-15 D4-2400 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5713-001.A00G 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 16KTF51264HZ-1G6M1 4GB

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Kingston CBD26D4U9S8MH-8 8GB

Kingston CBD26D4U9S8MH-8 8GB