Micron Technology 16KTF51264HZ-1G6M1 4GB vs Kingston CBD26D4U9S8MH-8 8GB

总分

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分

Kingston CBD26D4U9S8MH-8 8GB

Kingston CBD26D4U9S8MH-8 8GB

差异规格评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB

报告一个错误

Kingston CBD26D4U9S8MH-8 8GB

需要考虑的原因
Kingston CBD26D4U9S8MH-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 -54% 更低的延时
更快的读取速度，GB/s

17.3 10.6

测试中的平均数值
更快的写入速度，GB/s

13.3 6.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF51264HZ-1G6M1 4GB

Kingston CBD26D4U9S8MH-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 28
读取速度，GB/s

10.6 17.3
写入速度，GB/s

6.9 13.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1647 3259

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Peak Electronics 256X64M-67E 2GB

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Kingston 99U5584-004.A00LF 4GB

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G Skill Intl F4-3600C16-8GTRGC 8GB

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Kingston KF560C40-16 16GB

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Corsair CMX16GX3M2A1333C9 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M378A5143DB0-CPB 4GB

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Kingston KHX2800C14D4/8GX 8GB

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V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

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Kingston 9905665-017.A00G 4GB

Kingston 9905665-017.A00G 4GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Corsair CMU16GX4M2A2400C16 8GB

Corsair CMU16GX4M2A2400C16 8GB

Kingston 99U5458-008.A00LF 4GB

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Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB

Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB