Corsair CMY8GX3M2A2666C10 4GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 42

左右 60% 更低的延时
更快的读取速度，GB/s

22.8 12.7

测试中的平均数值
更快的写入速度，GB/s

15.4 10.2

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 42
读取速度，GB/s

22.8 12.7
写入速度，GB/s

15.4 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Apacer Technology 78.DAGNN.4030B 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMK64GX4M4B3200C16 16GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

Kingston 9965516-112.A00LF 16GB

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Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMK32GX4M4K4266C19 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB