Corsair CMY8GX3M2A2666C10 4GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异规格评论

差异

Corsair CMY8GX3M2A2666C10 4GB

需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 36

左右 53% 更低的延时
更快的读取速度，GB/s

22.8 13.9

测试中的平均数值
更快的写入速度，GB/s

15.4 10.1

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

17 36
读取速度，GB/s

22.8 13.9
写入速度，GB/s

15.4 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3391 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-156.A00LF 2GB

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A-DATA Technology DQKD1A08 1GB

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Avant Technology W644GU44J2320NH 32GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3000C16-8GSXFB 8GB

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SK Hynix HMA82GR7MFR8N-UH 16GB

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Kingston 9905403-011.A03LF 2GB

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Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M4A2133C13 4GB

Corsair CMK16GX4M4A2133C13 4GB