Corsair CMZ16GX3M2A2400C10 8GB vs Corsair CMK16GX4M1A2400C16 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Corsair CMK16GX4M1A2400C16 16GB

Corsair CMK16GX4M1A2400C16 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Corsair CMK16GX4M1A2400C16 16GB

需要考虑的原因
Corsair CMK16GX4M1A2400C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

15.2 11.4

测试中的平均数值
更快的写入速度，GB/s

9.6 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMK16GX4M1A2400C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

11.4 15.2
写入速度，GB/s

7.4 9.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 2810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston KVR533D2N4 512MB

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Avant Technology J644GU44J9266NQ 32GB

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Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

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Kingston KF552C40-16 16GB

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Crucial Technology BL8G30C15U4B.8FE 8GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB