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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
Corsair CMZ16GX3M2A2400C10 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
122
左右 70% 更低的延时
更快的读取速度,GB/s
11.4
9.4
测试中的平均数值
更快的写入速度,GB/s
7.4
5.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
122
读取速度,GB/s
11.4
9.4
写入速度,GB/s
7.4
5.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1683
1411
Corsair CMZ16GX3M2A2400C10 8GB RAM的比较
G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK16GX4M2D3000C16 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C19-32GNT 32GB
Kingston 99U5403-492.A00LF 8GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMK32GX4M4A2800C16 8GB
SK Hynix HMT325U6BFR8C-H9 2GB
Samsung M378A5143EB1-CPB 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Apacer Technology 78.C1GQB.4032B 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMK64GX4M4B3466C16 16GB
Qimonda 72T128420EFA3SB2 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Samsung M393B2G70BH0-CK0 16GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-2666C18-4GFX 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
报告一个错误
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Bug description
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