Corsair CMZ16GX3M2A2400C10 8GB vs Lexar Co Limited LD4AS016G-H3200GST 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 44

左右 16% 更低的延时

Lexar Co Limited LD4AS016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AS016G-H3200GST 16GB

报告一个错误

更快的读取速度，GB/s

16.6 11.4

测试中的平均数值
更快的写入速度，GB/s

14.2 7.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 44
读取速度，GB/s

11.4 16.6
写入速度，GB/s

7.4 14.2
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1683 3146

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C18D4/8G 8GB

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Samsung M391A2K43BB1-CRC 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB