Corsair CMZ16GX3M2A2400C10 8GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Micron Technology 18ADF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 37

左右 -16% 更低的延时
更快的读取速度，GB/s

11.8 11.4

测试中的平均数值
更快的写入速度，GB/s

8.7 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 32
读取速度，GB/s

11.4 11.8
写入速度，GB/s

7.4 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology BL8G26C16S4B.8FD 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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Corsair CMG64GX4M2D3600C18 32GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Samsung M471B5173QH0-YK0 4GB

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Avant Technology W6451U48J7240N6 4GB

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Corsair CMR32GX4M4C3466C16 8GB

Corsair CMR32GX4M4C3466C16 8GB