Corsair CMZ16GX3M2A2400C10 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 71

左右 48% 更低的延时

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

报告一个错误

更快的读取速度，GB/s

15.5 11.4

测试中的平均数值
更快的写入速度，GB/s

8.3 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 71
读取速度，GB/s

11.4 15.5
写入速度，GB/s

7.4 8.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 1902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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SK Hynix HMA84GL7AMR4N-UH 32GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

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Kingston 99U5702-094.A00G 8GB

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PNY Electronics PNY 2GB

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Apacer Technology 78.CAGPN.DF40B 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

Elpida EBJ40EG8BFWB-JS-F 4GB

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Samsung M393B1G70BH0-YK0 8GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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