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Corsair VSA2GSDS667C4 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Corsair VSA2GSDS667C4 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分
star star star star star
Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分
star star star star star
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异 规格 评论

差异

Corsair VSA2GSDS667C4 2GB 需要考虑的原因
Corsair VSA2GSDS667C4 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    51 left arrow 73
    左右 30% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15.1
    测试中的平均数值
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB 需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.9 left arrow 1,839.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Corsair VSA2GSDS667C4 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 73
  • 读取速度，GB/s
    4,246.9 left arrow 15.1
  • 写入速度，GB/s
    1,839.1 left arrow 7.9
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    721 left arrow 1724

Corsair VSA2GSDS667C4 2GB RAM的比较

SK Hynix HYMP112S64CP6-S6 1GB
Gloway International (HK) STK4U2400D17161C 16GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较

TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Corsair VSA2GSDS667C4 2GB
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内存RAM
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Kingston ACR256X64D3S1333C9 2GB
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内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
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内存RAM
Samsung M393B5270CH0-CH9 4GB
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Samsung 1600 CL10 Series 8GB
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Corsair CMK32GX4M4Z2933C16 8GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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