Crucial Technology BL16G32C16U4B.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

差异

  • 更快的读取速度,GB/s
    20 left arrow 16
    测试中的平均数值
  • 更快的写入速度,GB/s
    15.9 left arrow 12.5
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
  • 低于PassMark测试中的延时,ns
    24 left arrow 29
    左右 -21% 更低的延时

规格

完整的技术规格清单
Crucial Technology BL16G32C16U4B.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    29 left arrow 24
  • 读取速度,GB/s
    20.0 left arrow 16.0
  • 写入速度,GB/s
    15.9 left arrow 12.5
  • 内存带宽,mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3713 left arrow 2925
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最新比较