Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Micron Technology 8ATF1G64HZ-3G2R1 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Micron Technology 8ATF1G64HZ-3G2R1 8GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 51

左右 33% 更低的延时
更快的读取速度，GB/s

16.2 15.8

测试中的平均数值

Micron Technology 8ATF1G64HZ-3G2R1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2R1 8GB

报告一个错误

更快的写入速度，GB/s

12.5 9.7

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Micron Technology 8ATF1G64HZ-3G2R1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 51
读取速度，GB/s

16.2 15.8
写入速度，GB/s

9.7 12.5
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2636 2570

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology VDQVE1B16 2GB

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Kingston 9905403-444.A00LF 4GB

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G Skill Intl F4-2400C17-8GISM 8GB

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Team Group Inc. TEANGROUP-UD4-2400 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Corsair CMK64GX4M4K3733C17 16GB

Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Super Talent F3200UA8G 8GB

Super Talent F3200UA8G 8GB

Kingston 9965525-140.A00LF 8GB

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AMD R744G2400U1S-UO 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology CT32G4SFD8266.C16FE 32GB