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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Asgard VML41UG-MIC1U22T1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Asgard VML41UG-MIC1U22T1 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 65
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 16.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.4
    测试中的平均数值
Asgard VML41UG-MIC1U22T1 8GB 需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Asgard VML41UG-MIC1U22T1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 65
  • 读取速度，GB/s
    16.9 left arrow 16.4
  • 写入速度，GB/s
    12.0 left arrow 8.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2041

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Asgard VML41UG-MIC1U22T1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
Team Group Inc. TEAMGROUP-SD4-2400 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C15S4/16G 16GB
Kingston KHX2666C15S4/16G 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMD8GX4M2B4000C19 4GB
Corsair CMD8GX4M2B4000C19 4GB
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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
AMD R744G2606U1S 4GB
AMD R744G2606U1S 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Hewlett-Packard 7EH68AA# 16GB
Hewlett-Packard 7EH68AA# 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
G Skill Intl F4-4400C19-8GTZKK 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
内存RAM