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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire CL16-18-18 D4-2666 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Golden Empire CL16-18-18 D4-2666 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Golden Empire CL16-18-18 D4-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Golden Empire CL16-18-18 D4-2666 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 -21% 更低的延时
更快的读取速度,GB/s
17.4
16.9
测试中的平均数值
更快的写入速度,GB/s
13.6
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire CL16-18-18 D4-2666 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
24
读取速度,GB/s
16.9
17.4
写入速度,GB/s
12.0
13.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
3049
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Golden Empire CL16-18-18 D4-2666 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-2400C15-8GIS 8GB
G Skill Intl F4-2400C17-8GIS 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9932291-002.A00G 4GB
Samsung M471A5143SB1-CRC 4GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK16GX4M1A2666C16 16GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
报告一个错误
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Bug description
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