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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Gloway International (HK) STK4U2400D15082C 8GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Gloway International (HK) STK4U2400D15082C 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分
star star star star star
Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 80
    左右 70% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 8.1
    测试中的平均数值
Gloway International (HK) STK4U2400D15082C 8GB 需要考虑的原因
Gloway International (HK) STK4U2400D15082C 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Gloway International (HK) STK4U2400D15082C 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 80
  • 读取速度，GB/s
    15.5 left arrow 14.7
  • 写入速度，GB/s
    11.0 left arrow 8.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 1775

Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Gloway International (HK) STK4U2400D15082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
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