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Crucial Technology BLS8G3N169ES4.16FE 8GB
G Skill Intl F4-4400C18-8GTRG 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs G Skill Intl F4-4400C18-8GTRG 8GB

总分
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分
star star star star star
G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB
报告一个错误
G Skill Intl F4-4400C18-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-4400C18-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 41
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    19 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N169ES4.16FE 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 24
  • 读取速度，GB/s
    13.3 left arrow 19.0
  • 写入速度，GB/s
    8.8 left arrow 17.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2394 left arrow 4069

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM的比较

Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB

G Skill Intl F4-4400C18-8GTRG 8GB RAM的比较

Samsung M395T2863QZ4-CF76 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Crucial Technology BLS8G3N169ES4.16FE 8GB
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G Skill Intl F4-4400C18-8GTRG 8GB
G Skill Intl F4-4400C18-8GTRG 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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