Crucial Technology BLS8G3N18AES4.16FE 8GB vs Crucial Technology CT16G4SFS832A.C8FB 16GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

Crucial Technology CT16G4SFS832A.C8FB 16GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

Crucial Technology CT16G4SFS832A.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFS832A.C8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 42

左右 -5% 更低的延时
更快的读取速度，GB/s

15.9 13.2

测试中的平均数值
更快的写入速度，GB/s

12.3 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology CT16G4SFS832A.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 40
读取速度，GB/s

13.2 15.9
写入速度，GB/s

9.4 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2326 3020

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Crucial Technology CT16G4SFS832A.C8FB 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

A-DATA Technology AD73I1C1674EV 4GB

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Corsair CMU32GX4M4C3400C16 8GB

Corsair CMU32GX4M4C3400C16 8GB