Crucial Technology BLS8G3N18AES4.16FE 8GB vs Samsung M471A5244BB0-CRC 4GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

Samsung M471A5244BB0-CRC 4GB

需要考虑的原因
Samsung M471A5244BB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 42

左右 -11% 更低的延时
更快的读取速度，GB/s

14 13.2

测试中的平均数值
更快的写入速度，GB/s

10.4 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

Samsung M471A5244BB0-CRC 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 38
读取速度，GB/s

13.2 14.0
写入速度，GB/s

9.4 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2326 2055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM3X2G1600C9 2GB

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Corsair CM4B16G4J2400A16K2-O 16GB

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Team Group Inc. TEAMGROUP-UD4-4000 4GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Samsung M471A5244BB0-CRC 4GB

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Corsair CMX4GX3M1A1333C9 4GB

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Samsung M471B5273DH0-CH9 4GB

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Micron Technology 36ASF4G72PZ-2G6H1 32GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB