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Crucial Technology BLT2G3D1608DT1TX0 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 63
    左右 63% 更低的延时
  • 更快的写入速度，GB/s
    9.4 left arrow 8.2
    测试中的平均数值
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 13.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 63
  • 读取速度，GB/s
    13.6 left arrow 16.6
  • 写入速度，GB/s
    9.4 left arrow 8.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 1863

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMW32GX4M4C3600C18 8GB
Corsair CMW32GX4M4C3600C18 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Kingston XJ69DF-MIE2 8GB
Kingston XJ69DF-MIE2 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
Crucial Technology BLS8G4D26BFSE.16FBD2 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMW32GX4M4C3200C16 8GB
Corsair CMW32GX4M4C3200C16 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMU16GX4M2C3200C16 8GB
Corsair CMU16GX4M2C3200C16 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM