Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BL16G26C16U4R.16FE 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 21% 更低的延时

Crucial Technology BL16G26C16U4R.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB

报告一个错误

更快的读取速度，GB/s

17.1 13.6

测试中的平均数值
更快的写入速度，GB/s

13.0 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BL16G26C16U4R.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 29
读取速度，GB/s

13.6 17.1
写入速度，GB/s

9.4 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 3384

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

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SK Hynix DDR2 800 2G 2GB

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G Skill Intl F4-4000C19-16GTZKK 16GB