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Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Patriot Memory (PDP Systems) PSD432G32002S 32GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 53
    左右 57% 更低的延时
Patriot Memory (PDP Systems) PSD432G32002S 32GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD432G32002S 32GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 53
  • 读取速度，GB/s
    13.6 left arrow 14.9
  • 写入速度，GB/s
    9.4 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 2643

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905630-025.A00G 8GB
Kingston 9905630-025.A00G 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Samsung M386A4K40BB0-CRC 32GB
Samsung M386A4K40BB0-CRC 32GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston ACR21D4S15HAG/8G 8GB
Kingston ACR21D4S15HAG/8G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
SK Hynix GKE160UD102408-2133 16GB
SK Hynix GKE160UD102408-2133 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Corsair CM4X8GC3000C15K4 8GB
Corsair CM4X8GC3000C15K4 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX2666C16S4/32G 32GB
Kingston KHX2666C16S4/32G 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CM4X4GF2400C14K4 4GB
Corsair CM4X4GF2400C14K4 4GB
内存RAM