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Crucial Technology BLT8G3D1869DT1TX0. 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
比较
Crucial Technology BLT8G3D1869DT1TX0. 8GB vs Crucial Technology CT16G4DFS8266.C8FE 16GB
总分
Crucial Technology BLT8G3D1869DT1TX0. 8GB
总分
Crucial Technology CT16G4DFS8266.C8FE 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLT8G3D1869DT1TX0. 8GB
报告一个错误
更快的读取速度,GB/s
15.8
14.2
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFS8266.C8FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
35
左右 -21% 更低的延时
更快的写入速度,GB/s
10.3
10.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLT8G3D1869DT1TX0. 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
29
读取速度,GB/s
15.8
14.2
写入速度,GB/s
10.0
10.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2706
2984
Crucial Technology BLT8G3D1869DT1TX0. 8GB RAM的比较
Kingston KHX3200C16D4/8GX 8GB
Kingston XK2M26-MIE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston M378A1K43CB2-CRC 8GB
Crucial Technology BLT8G3D1869DT1TX0. 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Samsung M471A1K43DB1-CTD 8GB
Kingston Kingston DDR2800Mh 2GB
Kingston 99U5471-020.A00LF 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4000C18-16GVK 16GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMD16GX4M4A2666C15 4GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3000C15-8GVKB 8GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C14-8GTZKY 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Samsung DDR3 8GB 1600MHz 8GB
Golden Empire CL18-20-20 D4-3000 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C15-4GRK 4GB
报告一个错误
×
Bug description
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