RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
比较
Crucial Technology CT102464BA160B.M16 8GB vs Crucial Technology CT8G4DFS824A.C8FBR1 8GB
总分
Crucial Technology CT102464BA160B.M16 8GB
总分
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB
报告一个错误
需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
40
左右 -54% 更低的延时
更快的读取速度,GB/s
14.1
12.6
测试中的平均数值
更快的写入速度,GB/s
8.8
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
40
26
读取速度,GB/s
12.6
14.1
写入速度,GB/s
7.8
8.8
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2209
2359
Crucial Technology CT102464BA160B.M16 8GB RAM的比较
Corsair CMZ16GX3M2A1600C9 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
MDT Technologies GmbH MDT 1GB DDR2-66 1GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Transcend Information JM3200HLE-16G 16GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMA41GR7AFR4N-UH 8GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M4 70T3354BZ0-CCC 256MB
Kingston ACR16D3LS1KNG/4G 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK16GX4M2B2800C14 8GB
Samsung M4 70T5663QZ3-CE6 2GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Crucial Technology CT8G4DFS824A.C8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
报告一个错误
×
Bug description
Source link