Crucial Technology CT102464BA160B.M16 8GB vs Samsung M378A1G44AB0-CWE 8GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 40

左右 -5% 更低的延时
更快的读取速度，GB/s

16.5 12.6

测试中的平均数值
更快的写入速度，GB/s

10.9 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

Samsung M378A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 38
读取速度，GB/s

12.6 16.5
写入速度，GB/s

7.8 10.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2209 2829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C19-16GTZSW 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Micron Technology 8ATF1G64AZ-2G3A1 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Kingston ACR16D3LFS1KBG/2G 2GB

G Skill Intl F4-3600C17-8GTZ 8GB

G Skill Intl F4-3600C17-8GTZ 8GB