Crucial Technology CT102464BF160B.C16 8GB vs G Skill Intl F4-3600C19-16GSXKB 16GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

G Skill Intl F4-3600C19-16GSXKB 16GB

G Skill Intl F4-3600C19-16GSXKB 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

G Skill Intl F4-3600C19-16GSXKB 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GSXKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 -47% 更低的延时
更快的读取速度，GB/s

18.2 12.6

测试中的平均数值
更快的写入速度，GB/s

15.0 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

G Skill Intl F4-3600C19-16GSXKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 30
读取速度，GB/s

12.6 18.2
写入速度，GB/s

8.6 15.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2193 3580

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BF160B.C16 8GB

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Essencore Limited KD4AGU880-32A160U 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMR32GX4M4C3600C18 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

SK Hynix HMT351S6AFR8C-G7 4GB

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Corsair CMSX16GX4M2A2400C16 8GB