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Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB

Crucial Technology CT102464BF160B.C16 8GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
Micron Technology 4ATF51264AZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 44
    左右 -29% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 34
  • 读取速度，GB/s
    12.6 left arrow 15.6
  • 写入速度，GB/s
    8.6 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 2468

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-2666C15-4GVK 4GB
G Skill Intl F4-2666C15-4GVK 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Hewlett-Packard 7EH68AA# 16GB
Hewlett-Packard 7EH68AA# 16GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMV32GX4M1A2666C18 32GB
Corsair CMV32GX4M1A2666C18 32GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-3000C16-16GTRS 16GB
G Skill Intl F4-3000C16-16GTRS 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Team Group Inc. DDR4 3600 8GB
Team Group Inc. DDR4 3600 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Mushkin MRA4S266GHHF32G 32GB
Mushkin MRA4S266GHHF32G 32GB
内存RAM