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Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
比较
Crucial Technology CT25664AA800.M16FG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
总分
Crucial Technology CT25664AA800.M16FG 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB
报告一个错误
更快的读取速度,GB/s
4
14.6
测试中的平均数值
更快的写入速度,GB/s
2,027.0
10.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
52
左右 -93% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664AA800.M16FG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
52
27
读取速度,GB/s
4,837.1
14.6
写入速度,GB/s
2,027.0
10.5
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
794
2409
Crucial Technology CT25664AA800.M16FG 2GB RAM的比较
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FJ 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905599-025.A00G 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMW32GX4M2C3200C16 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
Team Group Inc. UD5-6400 16GB
Golden Empire CL18-20-20 D4-3600 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X16GE2400C16S4 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMV4GX4M1A2666C18 4GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C15-16GTZKY 16GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-8GTZKY 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3600C18-32GTRS 32GB
Samsung M393B5270CH0-CH9 4GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung V-GeN D4S4GL30A16TS5 4GB
报告一个错误
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