Crucial Technology CT25664AA800.M16FM 2GB vs Kingston 9905665-021.A00G 4GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

Kingston 9905665-021.A00G 4GB

Kingston 9905665-021.A00G 4GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 18

测试中的平均数值
更快的写入速度，GB/s

2,135.0 12.9

测试中的平均数值

Kingston 9905665-021.A00G 4GB

需要考虑的原因
Kingston 9905665-021.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 51

左右 -143% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

Kingston 9905665-021.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 21
读取速度，GB/s

5,021.4 18.0
写入速度，GB/s

2,135.0 12.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

855 2772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-3600C16-16GTRG 16GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

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Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

G Skill Intl F4-4000C17-8GVKB 8GB

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Samsung M378B5773DH0-CH9 2GB

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Kingston 9905624-009.A00G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Asgard VMA44UG-MEC1U2AW1 8GB

Asgard VMA44UG-MEC1U2AW1 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Hewlett-Packard 7TE39AA#ABC 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB