Crucial Technology CT25664AA800.M16FM 2GB vs V-GEN D4H8GS24A8 8GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

低于PassMark测试中的延时，ns

51 92

左右 45% 更低的延时
更快的读取速度，GB/s

5 15.1

测试中的平均数值

V-GEN D4H8GS24A8 8GB

需要考虑的原因
V-GEN D4H8GS24A8 8GB

报告一个错误

更快的写入速度，GB/s

8.2 2,135.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

V-GEN D4H8GS24A8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 92
读取速度，GB/s

5,021.4 15.1
写入速度，GB/s

2,135.0 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

855 1640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology BLS16G4D240FSC.16FBD 16GB

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Apacer Technology 76.D305G.D390B 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Corsair CMR32GX4M2D3000C16 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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V-Color Technology Inc. TD8G16C16-UHK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMK16GX4M2K3600C19 8GB

Corsair CMK16GX4M2K3600C19 8GB

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Kingston 99U5474-022.A00LF 2GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB