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Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMWX8GD3200C16W4 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Corsair CMWX8GD3200C16W4 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
Corsair CMWX8GD3200C16W4 8GB 需要考虑的原因
Corsair CMWX8GD3200C16W4 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMWX8GD3200C16W4 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    14.3 left arrow 17.9
  • 写入速度，GB/s
    10.1 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 3502

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Corsair CMWX8GD3200C16W4 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMWX8GD3200C16W4 8GB
Corsair CMWX8GD3200C16W4 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMD32GX4M4A2666C15 8GB
Corsair CMD32GX4M4A2666C15 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston XW21KG-MIE-NX 8GB
Kingston XW21KG-MIE-NX 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Corsair CMU64GX4M4C3000C15 16GB
Corsair CMU64GX4M4C3000C15 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Golden Empire CL15-17-17 D4-3000 8GB
Golden Empire CL15-17-17 D4-3000 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M2D3600C18 8GB
Corsair CMK16GX4M2D3600C18 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA82GR7JJR8N-VK 16GB
SK Hynix HMA82GR7JJR8N-VK 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM