Crucial Technology CT25664BA160B.C16F 2GB vs Crucial Technology BLS4G4D26BFSC.8FE 4GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Crucial Technology BLS4G4D26BFSC.8FE 4GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

Crucial Technology BLS4G4D26BFSC.8FE 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 29

左右 -53% 更低的延时
更快的读取速度，GB/s

18.8 14.3

测试中的平均数值
更快的写入速度，GB/s

14.3 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 19
读取速度，GB/s

14.3 18.8
写入速度，GB/s

10.1 14.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2227 2991

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Samsung M471B5273CH0-CH9 4GB

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Samsung M378B5673FH0-CH9 2GB

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Corsair CMD32GX4M4A2800C16 8GB

Corsair CMD32GX4M4A2800C16 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB