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Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB

Samsung M378B5673FH0-CH9 2GB vs A-DATA Technology AO1P32NCSV1-BEWS 16GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 60
    左右 42% 更低的延时
A-DATA Technology AO1P32NCSV1-BEWS 16GB 需要考虑的原因
A-DATA Technology AO1P32NCSV1-BEWS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 60
  • 读取速度，GB/s
    14.4 left arrow 15.0
  • 写入速度，GB/s
    9.5 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2554

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston 9965525-140.A00LF 8GB
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Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
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内存RAM
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Kingston 9905471-002.A00LF 2GB
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Crucial Technology CT8G4SFRA32A.M4FE 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
内存RAM
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SpecTek Incorporated ?????????????????? 2GB
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
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SK Hynix HMT351S6CFR8C-PB 4GB
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V-Color Technology Inc. TN48G26S819-SB 8GB
内存RAM
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Kingston 99U5474-023.A00LF 4GB
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AMD R744G2400U1S 4GB
内存RAM