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Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology CT25664BA160B.C16F 2GB vs Crucial Technology BLS8G4D26BFSC.16FD2 8GB

总分
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

差异 规格 评论

差异

Crucial Technology CT25664BA160B.C16F 2GB 需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
Crucial Technology BLS8G4D26BFSC.16FD2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 -7% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 27
  • 读取速度，GB/s
    14.3 left arrow 18.4
  • 写入速度，GB/s
    10.1 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2227 left arrow 3388

Crucial Technology CT25664BA160B.C16F 2GB RAM的比较

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.01G86.9H50C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMK16GX4M2K3600C19 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Kingston MSI24D4S7S8MH-8 8GB
Kingston MSI24D4S7S8MH-8 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Avant Technology W642GU44J2320NC 16GB
Avant Technology W642GU44J2320NC 16GB
内存RAM