Crucial Technology CT25664BA160B.C16F 2GB vs Micron Technology 8ATF1G64HZ-3G2J1 8GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 34

左右 15% 更低的延时

Micron Technology 8ATF1G64HZ-3G2J1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2J1 8GB

报告一个错误

更快的读取速度，GB/s

15.6 14.3

测试中的平均数值
更快的写入速度，GB/s

11.9 10.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 34
读取速度，GB/s

14.3 15.6
写入速度，GB/s

10.1 11.9
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2227 2812

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-8GRS 8GB

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Apacer Technology 76.D105G.D090B 16GB

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Kingston 9965669-017.A00G 16GB

Kingston 9965669-017.A00G 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Samsung M393B1G70BH0-CK0 8GB

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Mushkin MR[A/B]280HHHH16G 16GB

Mushkin MR[A/B]280HHHH16G 16GB

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G Skill Intl F4-3200C15-16GTZSK 16GB