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Crucial Technology CT4G3S1339M.M16FKD 4GB
Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB vs Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Crucial Technology CT4G3S1339M.M16FKD 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

差异 规格 评论

差异

Crucial Technology CT4G3S1339M.M16FKD 4GB 需要考虑的原因
Crucial Technology CT4G3S1339M.M16FKD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 48
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    11.1 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 5.9
    测试中的平均数值
Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology CT4G3S1339M.M16FKD 4GB
Samsung M471B5273CH0-CH9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 48
  • 读取速度，GB/s
    11.1 left arrow 8.9
  • 写入速度，GB/s
    8.0 left arrow 5.9
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1908 left arrow 1420

Crucial Technology CT4G3S1339M.M16FKD 4GB RAM的比较

Samsung M471B5273DH0-CH9 4GB
Kingston ACR256X64D3S1333C9 2GB

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT4G3S1339M.M16FKD 4GB
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Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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