Samsung M471B5273DH0-CH9 4GB vs Crucial Technology CT4G3S1339M.M16FKD 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

Crucial Technology CT4G3S1339M.M16FKD 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

Crucial Technology CT4G3S1339M.M16FKD 4GB

需要考虑的原因
Crucial Technology CT4G3S1339M.M16FKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 47

左右 -68% 更低的延时
更快的读取速度，GB/s

11.1 9.3

测试中的平均数值
更快的写入速度，GB/s

8.0 5.9

测试中的平均数值

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT4G3S1339M.M16FKD 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

47 28
读取速度，GB/s

9.3 11.1
写入速度，GB/s

5.9 8.0
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1413 1908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-8GTZKK 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT16G4DFD8213.C16FAD 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology 8ATF1G64AZ-3G2J1 8GB

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Corsair CMD128GX4M8A2666C15 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB

AMD R538G1601U2S 8GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB