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Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2666C15-8GRKB 8GB

Crucial Technology CT51264AC800.C16FC 4GB vs G Skill Intl F4-2666C15-8GRKB 8GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
G Skill Intl F4-2666C15-8GRKB 8GB

G Skill Intl F4-2666C15-8GRKB 8GB

差异 规格 评论

差异

Crucial Technology CT51264AC800.C16FC 4GB 需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,378.6 left arrow 10.9
    测试中的平均数值
G Skill Intl F4-2666C15-8GRKB 8GB 需要考虑的原因
G Skill Intl F4-2666C15-8GRKB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 62
    左右 -130% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2666C15-8GRKB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 27
  • 读取速度，GB/s
    4,670.6 left arrow 13.3
  • 写入速度，GB/s
    2,378.6 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    861 left arrow 2823

Crucial Technology CT51264AC800.C16FC 4GB RAM的比较

Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB

G Skill Intl F4-2666C15-8GRKB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B5270CH0-CH9 4GB
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Corsair CMW64GX4M8C3466C16 8GB
Corsair CMW64GX4M8C3466C16 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
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Corsair CMWX8GD3600C18W4 8GB
Corsair CMWX8GD3600C18W4 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
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GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
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Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
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G Skill Intl F4-3300C16-8GTZKW 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F4-2666C19-8GVR 8GB
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AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston 99P5474-014.A00LF 4GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Corsair CMK16GX4M4A2133C13 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
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G Skill Intl F4-3600C18-8GTRS 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM