Crucial Technology CT51264AC800.C16FC 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Crucial Technology CT51264AC800.C16FC 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

总分
star star star star star
Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

差异

  • 更快的读取速度,GB/s
    4 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度,GB/s
    2,378.6 left arrow 12.1
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    24 left arrow 62
    左右 -158% 更低的延时
  • 更高的内存带宽,mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    62 left arrow 24
  • 读取速度,GB/s
    4,670.6 left arrow 15.6
  • 写入速度,GB/s
    2,378.6 left arrow 12.1
  • 内存带宽,mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    861 left arrow 2852
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最新比较