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Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology AFLD48EH1P 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Micron Technology AFLD48EH1P 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Micron Technology AFLD48EH1P 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
43
左右 37% 更低的延时
需要考虑的原因
Micron Technology AFLD48EH1P 8GB
报告一个错误
更快的读取速度,GB/s
16.1
13.9
测试中的平均数值
更快的写入速度,GB/s
10.7
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology AFLD48EH1P 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
43
读取速度,GB/s
13.9
16.1
写入速度,GB/s
8.4
10.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2928
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Micron Technology AFLD48EH1P 8GB RAM的比较
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT51264BA1339.C16F 4GB
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Kingston 99P5471-002.A00LF 2GB
Micron Technology ILG8GS2400A 8GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK128GX4M8B3200C16 16GB
A-DATA Technology DQVE1908 512MB
Kingston 9905701-017.A00G 16GB
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Samsung M393A1G40EB1-CRC 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3000C15-8GTZ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF1G64HZ-3G2E1 8GB
报告一个错误
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