Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 4ATF1G64HZ-3G2E1 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 35
    左右 31% 更低的延时
  • 更快的读取速度,GB/s
    16 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.5 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽,mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 4ATF1G64HZ-3G2E1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    24 left arrow 35
  • 读取速度,GB/s
    16.0 left arrow 15.1
  • 写入速度,GB/s
    12.5 left arrow 9.6
  • 内存带宽,mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2502
RAM Latency Calculator
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最新比较