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Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information TS512MSH64V4H 4GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Transcend Information TS512MSH64V4H 4GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Transcend Information TS512MSH64V4H 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
45
左右 40% 更低的延时
更快的读取速度,GB/s
13.9
5.3
测试中的平均数值
需要考虑的原因
Transcend Information TS512MSH64V4H 4GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information TS512MSH64V4H 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
45
读取速度,GB/s
13.9
5.3
写入速度,GB/s
8.4
8.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
1535
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Transcend Information TS512MSH64V4H 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT51264BA1339.C16F 4GB
Transcend Information TS512MSH64V4H 4GB
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Crucial Technology BLS8G4D240FSB.16FBD? 8GB
Crucial Technology CT51264BA1339.C16F 4GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Samsung M393B1K70QB0-CK0 8GB
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Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK64GX4M4B3333C16 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
报告一个错误
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Bug description
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