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Crucial Technology CT51264BA160B.C16F 4GB
AMD R744G2606U1S 4GB
比较
Crucial Technology CT51264BA160B.C16F 4GB vs AMD R744G2606U1S 4GB
总分
Crucial Technology CT51264BA160B.C16F 4GB
总分
AMD R744G2606U1S 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
76
左右 46% 更低的延时
更快的写入速度,GB/s
9.4
8.7
测试中的平均数值
需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
更快的读取速度,GB/s
15.7
14.3
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA160B.C16F 4GB
AMD R744G2606U1S 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
41
76
读取速度,GB/s
14.3
15.7
写入速度,GB/s
9.4
8.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2142
1809
Crucial Technology CT51264BA160B.C16F 4GB RAM的比较
SK Hynix HMT351U6CFR8C-PB 4GB
Corsair CMSO4GX3M1C1600C11 4GB
AMD R744G2606U1S 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA160B.C16F 4GB
AMD R744G2606U1S 4GB
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Crucial Technology CT102464BA160B.M16 8GB
Neo Forza NMUD416E82-3600 16GB
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Crucial Technology BL16G32C16S4B.M8FB1 16GB
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Kingston 9905403-061.A00LF 2GB
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Samsung M393B1G70QH0-YK0 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK8GX4M2C3000C16 4GB
报告一个错误
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Bug description
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