Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology BL8G32C16U4BL.M8FE 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Crucial Technology BL8G32C16U4BL.M8FE 8GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Crucial Technology BL8G32C16U4BL.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4BL.M8FE 8GB

报告一个错误

更快的读取速度，GB/s

19.2 12.1

测试中的平均数值
更快的写入速度，GB/s

15.0 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G32C16U4BL.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

12.1 19.2
写入速度，GB/s

8.6 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3532

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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PUSKILL DDR3 1600 8G 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BL8G32C16U4BL.M8FE 8GB

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EVGA 16G-D4-2666-MR 4GB

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CM4X8GF2666C18S2 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston 9905625-096.A00G 16GB

Kingston 9905625-096.A00G 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Samsung M391B5673EH1-CH9 2GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB