Crucial Technology CT51264BD1339.M16F 4GB vs Crucial Technology CT16G4DFD8266.M16FE 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 33

左右 24% 更低的延时

Crucial Technology CT16G4DFD8266.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.1

测试中的平均数值
更快的写入速度，GB/s

13.6 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 33
读取速度，GB/s

12.1 16.5
写入速度，GB/s

8.6 13.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 3367

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT16G4DFD8266.M16FE 16GB

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Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

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Samsung M392B1K70CM0-YH9 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

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Kingston 99U5428-018.A00LF 8GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB