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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M392B1K70CM0-YH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M392B1K70CM0-YH9 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
Samsung M392B1K70CM0-YH9 8GB 需要考虑的原因
Samsung M392B1K70CM0-YH9 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 62
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    11 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 5.9
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M392B1K70CM0-YH9 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    62 left arrow 40
  • 读取速度，GB/s
    7.4 left arrow 11.0
  • 写入速度，GB/s
    5.9 left arrow 10.0
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 2493

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

Samsung M392B1K70CM0-YH9 8GB RAM的比较

Samsung M393B2G70BH0-CH9 16GB
Samsung M393B5170FH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M471B5273CH0-CH9 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
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Corsair CMK16GX4M4B3200C16 4GB
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Kingston 9905403-444.A00LF 4GB
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Corsair CMK64GX4M4C3000C15 16GB
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内存RAM
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内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
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Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
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Samsung 1600 CL10 Series 8GB
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G Skill Intl F4-4000C17-16GTRSB 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Corsair CMK16GX4M2K4333C19 8GB
内存RAM
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Kingston 99U5474-028.A00LF 4GB
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Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
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